On the afternoon of May 14, a 9-member delegation led by Wang Xiaoying, Secretary-General of the Dalian Semiconductor Industry Association, visited Jinan Lujing Semiconductor Co., Ltd. for inspection and exchange. The two parties conducted in-depth discussions on the coordinated development of the semiconductor industrial chain, technological innovation, and market application, aiming to promote cross-regional resource integration and accelerate the upgrading of the domestic semiconductor industry. Xu Wenhui, General Manager of Jinan Lujing Semiconductor, participated in the reception.
On-Site Inspection: Enter Lujing Semiconductor, Explore Technological Innovation
Accompanied by Xu Wenhui of Jinan Lujing Semiconductor, the Dalian delegation visited Lujing Semiconductor’s production workshops and laboratories. Through the on-site inspection, the delegation gained an up-close understanding of the SiC power device manufacturing process, reliability testing, and packaging technology, and highly praised Lujing Semiconductor’s progress in the R&D and mass production capabilities of automotive-grade devices. All members agreed that Lujing Semiconductor’s automated production lines and quality control system demonstrate the solid strength of domestic semiconductor enterprises.
Visit and Exchange: Deepen Regional Collaboration, Jointly Map Out Development Blueprint
Subsequently, the Dalian delegation visited Lujing’s exhibition hall, and the two parties exchanged views on the development trend of the semiconductor industry. The delegation of the Dalian Semiconductor Industry Association was briefed on Lujing Semiconductor’s technological breakthroughs and industrialization status in the field of silicon carbide (SiC) power devices. Lujing Semiconductor’s technical team focused on demonstrating its phased achievements in the R&D of ultra-high voltage 5000V SiC Schottky diodes and high-power MOSFET devices, and shared application cases in scenarios such as new energy vehicles and photovoltaic energy storage.
Image
Both parties agreed that silicon carbide, as a core material for the third-generation semiconductors, will become a key breakthrough for new energy and high-efficiency power electronic technologies, thanks to its characteristics of high temperature resistance, high frequency, and low loss.
Future Outlook: Build Industrial Ecosystem, Empower High-Quality Development
During the exchange, the two parties initially reached a number of cooperation intentions, including exploring the large-scale application of ultra-high voltage power devices in downstream industries. Wang Xiaoying, Secretary-General of the Dalian Semiconductor Industry Association, emphasized: "This inspection is an important step in deepening cross-regional collaboration. We look forward to continuing to deepen cooperation in policy alignment, standard formulation, and talent cultivation in the future."
This exchange marks that the Dalian Semiconductor Industry Association and Lujing Semiconductor have taken a substantial step in areas such as technological research, market development, and ecosystem co-construction, injecting new impetus into the independent and controllable development and green transformation of China’s semiconductor industry.
