The rising in The Third Generation Of Semiconductor SiC Technology

2017-10-10

     The first generation of semiconductor material Si ignited the "star of fire" in the development of the information industry, and the Si material chip also achieved the "Silicon Valley of the United States" high-tech industry group, prompting the birth of Intel and other world semiconductor giants. More than 95% of semiconductor devices and More than 99% of integrated circuits are made of Si material.


     At present, 40% of the world's energy is consumed as electrical energy, and the largest power conversion is the dissipation of semiconductor power devices. Once the "mainstay" Si power devices have been increasingly developed materials limit, it is difficult to meet today's social development for high-frequency, high temperature, high power, energy efficiency, harsh environment and small size of the new demand. The third generation of semiconductor materials, represented by SiC, will become a breakthrough with its excellent properties and is rapidly emerging.


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     SiC is as a wide band gap semiconductor material, not only breakdown electric field strength, good thermal stability, but also has high carrier drift speed, high thermal conductivity characteristics can be used to create a variety of high temperature high-frequency, High-power high-power devices, used in Si devices difficult to do the occasion.


     The third generation of semiconductor materials like SiC will be widely used in optoelectronic devices, power electronic devices and other fields, and will play an important innovation role in various modern industrial fields due to its excellent semiconductor properties. The application prospect and market potential are huge . 


    With the reduction of SiC production cost, SiC semiconductor is gradually replacing Si semiconductor by virtue of its excellent performance and breaking the bottleneck of Si-based material due to its performance. Undoubtedly, it will lead to an industrial revolution similar to a steam engine:


1. If SiC material used in the field of high-speed rail,the power can save more than 20%, and it can reduce the size of the power system also;


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2.SiC material used in the field of new energy vehicles can reduce energy consumption by 20%;


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 3. SiC material used in the field of home appliances can save 50%;
 4. SiC material used in the field of wind power can improve efficiency 20%;


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5. SiC material used in the field of solar energy can reduce the photoelectric conversion loss of more than 25%;


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6. SiC materials used in the field of industrial motors could save energy 30% -50%;


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7. SiC materials used in the field of HVDC transmission and smart grid can reduce the power loss by 60% and the power supply efficiency by more than 40% at the same time;


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8. The application of SiC materials in big data helps to reduce the data center energy consumption (currently, the power consumption of 3 million data centers in the world is about 30 million kilowatts per hour);


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9. SiC materials used in the field of communications, can significantly improve the signal transmission efficiency and transmission security and stability;


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10. SiC material can make the field of aerospace equipment loss can be reduced by 30% -50%, 3 times higher operating frequency, inductive and capacitive volume reduced by 3 times, significantly reducing the weight of the radiator.


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      At the beginning of 2014, the United States President Barack Obama personally led the formation of the third generation of wideband semiconductor industry alliance represented by SiC.  this measure is meaning the United States is strongly supported by the third generation of wide band-gap semiconductor industry represented by SiC semiconductor. It is understood that the industry has now received a total of 140 million US dollars from the federal and local governments in the United States. As early as 2013, the Japanese government will SiC into the "Prime Minister strategy" that the future 50% energy saving to be achieved through it to create a new era of clean energy.


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    As the United States President Barack Obama mentioned at the inaugural meeting of this industry alliance, the third-generation semiconductor technology represented by SiC will reduce the size of the laptop adapter by 80%, and may also reduce the size of a substation to a suitcase Size specifications. Perhaps, this is the charm of SiC semiconductor.


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      In the future, power devices made of semiconductor SiC material will support the development trend of energy-saving technologies today and become the core components of energy-saving equipment. Therefore, semiconductor SiC power devices are also regarded as the "CPU" of power converter devices in the industry and the green economy The "core chip."

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